Semiconductor Technology: Processing and Novel Fabrication Techniques.

Contributor(s):

Material type: Text

TextPublication details: New York : John Wiley & Sons, 1997.Description: 240 p. : illISBN:

9780471127925

Subject(s):

DDC classification:

621.38152 SEM 1997

LOC classification:

TK7871.85.84453 1997

Summary: Drawing on decades of Russian semiconductor research, this remarkable book makes available a great many Si and III-V semiconductor technologies that are practically unknown in the West. Often simpler and cheaper than conventional Western methods, these approaches will enable researchers to improve the quality of semiconductor materials and fabricate new types of devices. After a general introduction to semiconductor technology, the book describes transmutation doping, which offers all the advantages of neutron doping, permits controlled doping depth from 0.1 micron to 1mm, and offers the option of forming deep channels. Also presented is a novel technique using polymer spinon diffusant films for a uniform and reproducible introduction of impurities into silicon. Researchers and graduate students in solid state physics, device physics, materials science, and electrical engineering will find a wealth of original, stimulating, and valuable information in this unique manual.

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Holdings ( 1 )
Title notes ( 3 )

Holdings
Item type	Current library	Home library	Collection	Shelving location	Call number	Status	Date due	Barcode	Item holds
Open Collection	FIRST CITY UNIVERSITY COLLEGE	FIRST CITY UNIVERSITY COLLEGE	Open Collection	FCUC Library	621.38152 SEM 1997 (Browse shelf(Opens below))	Available		00009212

Total holds: 0

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"A Wiley-Interscience publication."

Includes index.

Drawing on decades of Russian semiconductor research, this remarkable book makes available a great many Si and III-V semiconductor technologies that are practically unknown in the West. Often simpler and cheaper than conventional Western methods, these approaches will enable researchers to improve the quality of semiconductor materials and fabricate new types of devices. After a general introduction to semiconductor technology, the book describes transmutation doping, which offers all the advantages of neutron doping, permits controlled doping depth from 0.1 micron to 1mm, and offers the option of forming deep channels. Also presented is a novel technique using polymer spinon diffusant films for a uniform and reproducible introduction of impurities into silicon. Researchers and graduate students in solid state physics, device physics, materials science, and electrical engineering will find a wealth of original, stimulating, and valuable information in this unique manual.