MARC details
| 000 -LEADER |
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| fixed length control field |
02832nam a2200289 a 4500 |
| 001 - CONTROL NUMBER |
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| control field |
vtls000005953 |
| 003 - CONTROL NUMBER IDENTIFIER |
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| control field |
MY-PjKIC |
| 005 - DATE AND TIME OF LATEST TRANSACTION |
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| control field |
20200206145018.0 |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION |
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| fixed length control field |
100211s1994 000 0 eng d |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER |
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| International Standard Book Number |
0471580058 |
| 035 ## - SYSTEM CONTROL NUMBER |
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| System control number |
0471580058 |
| 039 #9 - LEVEL OF BIBLIOGRAPHIC CONTROL AND CODING DETAIL [OBSOLETE] |
|---|
| Level of rules in bibliographic description |
201510191540 |
| Level of effort used to assign nonsubject heading access points |
norliday |
| Level of effort used to assign subject headings |
201006201205 |
| Level of effort used to assign classification |
faridah7 |
| Level of effort used to assign subject headings |
201002111747 |
| Level of effort used to assign classification |
VLOAD |
| Level of effort used to assign subject headings |
201002111620 |
| Level of effort used to assign classification |
VLOAD |
| -- |
201002111422 |
| -- |
VLOAD |
| 090 ## - LOCALLY ASSIGNED LC-TYPE CALL NUMBER (OCLC); LOCAL CALL NUMBER (RLIN) |
|---|
| Classification number (OCLC) (R) ; Classification number, CALL (RLIN) (NR) |
621.395 GHA |
| 100 1# - MAIN ENTRY--PERSONAL NAME |
|---|
| Personal name |
Ghandhi, Sorab Khushro, |
| Dates associated with a name |
1928- |
| 245 10 - TITLE STATEMENT |
|---|
| Title |
VLSI fabrication principles : |
| Remainder of title |
silicon and gallium arsenide / |
| Statement of responsibility, etc. |
Sorab K. Ghandhi. |
| 250 ## - EDITION STATEMENT |
|---|
| Edition statement |
2nd ed. |
| 260 ## - PUBLICATION, DISTRIBUTION, ETC. |
|---|
| Place of publication, distribution, etc. |
New York : |
| Name of publisher, distributor, etc. |
J. Wiley, |
| Date of publication, distribution, etc. |
c1994. |
| 300 ## - PHYSICAL DESCRIPTION |
|---|
| Extent |
xxiv, 834 p. : |
| Other physical details |
ill. ; |
| Dimensions |
25 cm. |
| 500 ## - GENERAL NOTE |
|---|
| General note |
"A Wiley-Interscience publication." |
| 504 ## - BIBLIOGRAPHY, ETC. NOTE |
|---|
| Bibliography, etc. note |
Includes bibliographical references and index. |
| 520 ## - SUMMARY, ETC. |
|---|
| Summary, etc. |
Like its celebrated predecessor, this Second Edition of VLSI Fabrication Principles adheres to the basic philosophy that there is a common core to the behavior and process technology of all semiconductor materials, and that looking at this subject from a unified point of view is the best way to stay up-to-date over the long term. By presenting a unified treatment of both elemental and compound semiconductor technologies, and by emphasizing the underlying principles that govern their behavior, this book gives students and practicing professionals the tools with which to stay up-to-date with the rapid changes in VLSI fabrication technology. All chapters have been modified and expanded to reflect a growing understanding of VLSI fabrication processes and shifts in the direction of process technology. The chapter on Epitaxy, for instance, has been greatly expanded and a new section added on molecular beam epitaxy, while the section on liquid phase epitaxy has been shortened because of its diminished role in process technology. New material on dry etching techniques has been incorporated in the chapter on Etching and Cleaning. In some places, the order of presentation has been changed to fine-tune the book's effectiveness as a senior and graduate-level teaching text. Fabrication principles covered include those for such circuits as CMOS, BIPOLAR, BICMOS, FET, and more. VLSI Fabrication Principles will equip students to cope, not only with state-of-the-art techniques, but with future developments as well. It will continue to be a valuable asset long after course work is done. For electrical engineers, physicists, and materials scientists, it will aid in understanding the limitations of fabrication processes used to make modern, solid-state and optoelectronic devices and circuits. |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name entry element |
Integrated circuits |
| General subdivision |
Very large scale integration. |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name entry element |
Silicon. |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM |
|---|
| Topical term or geographic name entry element |
Gallium arsenide. |
| 740 01 - ADDED ENTRY--UNCONTROLLED RELATED/ANALYTICAL TITLE |
|---|
| Uncontrolled related/analytical title |
Very large scale integration fabrication principles. |
