| 000 | 05815cam a2200721Ii 4500 | ||
|---|---|---|---|
| 001 | on1140200295 | ||
| 003 | OCoLC | ||
| 005 | 20201015085715.0 | ||
| 006 | m o d | ||
| 007 | cr cn||||||||| | ||
| 008 | 200116s2020 maua ob 001 0 eng d | ||
| 040 |
_aSTF _beng _erda _epn _cSTF _dCUV _dYDX _dUKAHL _dOCLCF _dEBLCP _dN$T |
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| 019 | _a1151196130 | ||
| 020 |
_a9781630817459 _q(electronic bk.) |
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| 020 |
_a1630817457 _q(electronic bk.) |
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| 020 | _z9781630817442 | ||
| 020 | _z1630817449 | ||
| 035 |
_a(OCoLC)1140200295 _z(OCoLC)1151196130 |
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| 050 | 4 | _aTK7876 | |
| 082 | 0 | 4 |
_a621.381/3 _223 |
| 049 | _aMAIN | ||
| 100 | 1 |
_aKompa, G�unter, _eauthor. |
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| 245 | 1 | 0 |
_aParameter extraction and complex nonlinear transistor models / _cG�unter Kompa. |
| 264 | 1 |
_aBoston : _bArtech House, _c[2020] |
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| 300 |
_a1 online resource : _billustrations |
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| 336 |
_atext _btxt _2rdacontent |
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| 337 |
_acomputer _bc _2rdamedia |
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| 338 |
_aonline resource _bcr _2rdacarrier |
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| 490 | 1 | _aArtech House microwave library | |
| 588 | _aDescription based on online resource; title from PDF title page (viewed on March 09, 2020) | ||
| 504 | _aIncludes bibliographical references and index | ||
| 505 | 0 | _aParameter Extraction and Complex Nonlinear Transistor Models -- Contents -- Preface -- Chapter 1 Introduction -- REFERENCES -- Chapter 2 Transistor Concepts: MESFET, HEMT, and HBT -- 2.1 INTRODUCTION -- 2.2 EVOLUTION OF FET DEVICES -- 2.2.1 Field-Effect Transistors -- 2.2.2 Heterojunction Bipolar Transistors -- 2.3 BASIC DEVICE STRUCTURES AND FUNCTIONING -- 2.3.1 MESFET -- 2.3.2 HEMT -- 2.3.3 HBT -- 2.5 SUMMARY -- REFERENCES -- Chapter 3 Classification of Transistor Models -- 3.1 INTRODUCTION -- 3.2 PHYSICAL MODELS -- 3.2.1 Numerical Physical Models -- 3.2.2 Analytical Physical Models | |
| 505 | 8 | _a3.3 EMPIRICAL MODELS -- 3.4 EXPERIMENTAL MODELS -- 3.5 BEHAVIORAL MODELS -- 3.5.1 ANN-Based Models -- 3.5.2 X-Parameter-Based Models -- 3.6 SUMMARY -- REFERENCES -- Chapter 4 Classical Shockley Model and Enhanced Modifications -- 4.1 INTRODUCTION -- 4.2 LONG-CHANNEL (SHOCKLEY) MODEL -- 4.3 EXPERIMENTAL AND ANALYTICAL v(E)-CHARACTERISTICS -- 4.4 IMPROVED SHOCKLEY MODEL INCLUDING CARRIER VELOCITY SATURATION -- 4.5 TWO-REGION MODEL -- 4.6 SHORT-CHANNEL SATURATION MODEL -- 4.7 RELATIONSHIPS BETWEEN MESFET AND HEMT DC CHARACTERISTICS -- 4.7.1 Transconductance -- 4.7.2 Gate-Source Capacitance | |
| 505 | 8 | _a4.7.3 MESFET and HEMT Transconductance Comparison -- 4.8 PROBLEMS AND SOLUTIONS -- 4.9 SUMMARY -- REFERENCES -- Chapter 5 Extrinsic Transistor Network at DC -- 5.1 INTRODUCTION -- 5.2 INTRINSIC CONTROL VOLTAGES FROM RESISTIVE NETWORK DE-EMBEDDING -- 5.3 REGRIDDING OF NONORTHOGONAL INTRINSIC VOLTAGES -- 5.4 REGRIDDING ISSUES WITH MATLAB -- 5.5 SUMMARY -- REFERENCES -- Chapter 6 Estimation of Model Element Values Based on Device Physical Data -- 6.1 INTRODUCTION -- 6.2 RESISTANCES -- 6.2.1 Ohmic Contact Resistance -- 6.2.2 Series Resistances -- 6.2.3 Gate Resistance, Gate Inductance | |
| 505 | 8 | _a6.2.4 Gate Charging Resistance -- 6.3 CONDUCTANCES -- 6.3.1 Transconductance -- 6.3.2 Channel Conductance -- 6.4 CAPACITANCES -- 6.4.1 Gate-Source Capacitance -- 6.4.2 Gate-Drain Capacitance -- 6.4.3 Drain-Source Capacitance -- 6.5 DELAY TIME -- 6.6 CONTACT AND INTERCONNECT STRUCTURES -- 6.6.1 Device Contacting Pads -- 6.6.2 Bondwire Inductance -- 6.6.3 Via Hole Inductance -- 6.6.4 Air Bridge -- 6.6.5 Field Plate -- 6.7 SUMMARY -- REFERENCES -- Chapter 7 Small-Signal Transistor Model Complexity -- 7.1 INTRODUCTION -- 7.2 SMALL-SIGNAL TRANSISTOR OPERATION | |
| 505 | 8 | _a7.2.1 Two-Port Y-Matrix Transistor Model -- 7.2.2 Generic Extrinsic Transistor Pi-Model -- 7.3 TRANSISTOR MODEL COMPLEXITY -- 7.3.1 Small-Periphery Devices -- 7.3.2 Large-Periphery Devices -- 7.3.3 High-Resistivity Silicon Substrates -- 7.4 SUMMARY -- REFERENCES -- Chapter 8 Reliable Parameter Estimates from Low-Frequency Measurements -- 8.1 INTRODUCTION -- 8.2 DETERMINATION OF GENERIC PI-MODEL PARAMETERS -- 8.2.1 Generic Transconductance and Output Conductance -- 8.2.2 Generic Capacitances -- 8.3 RELATIONS BETWEEN GENERIC AND PHYSICS-BASED PARAMETERS | |
| 505 | 8 | _a8.4 APPROXIMATE DETERMINATION OF PHYSICS-BASED INTRINSIC ELEMENTS FROM GENERIC MODEL PARAMETERS | |
| 590 |
_aeBooks on EBSCOhost _bEBSCO eBook Subscription Academic Collection - Worldwide |
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| 650 | 0 |
_aMicrowave devices _xMathematical models. |
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| 650 | 0 | 4 | _aMicrowave technology. |
| 650 | 7 |
_aMicrowave devices _xMathematical models. _2fast _0(OCoLC)fst01020200 |
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| 653 | _aTechnology, Engineering, Agriculture | ||
| 653 | _aTechnologie, Ingenieurswissenschaft, Landwirtschaft | ||
| 653 | _aTechnologie, ing�enierie et agriculture | ||
| 653 | _aElectronics & communications engineering | ||
| 653 | _aElektronik, Nachrichtentechnik | ||
| 653 | _aIng�enierie �electronique et technologie des communications | ||
| 653 | _aElectronics engineering | ||
| 653 | _aElektronik | ||
| 653 | _aG�enie �electronique | ||
| 653 | _aMicrowave technology | ||
| 653 | _aMikrowellentechnik | ||
| 653 | _aTechnologie des micro-ondes | ||
| 655 | 4 | _aElectronic books. | |
| 776 | 0 | 8 |
_iPrint version: _aKompa, G�unter _tParameter Extraction and Complex Nonlinear Transistor Models _dNorwood : Artech House,c2019 _z9781630817442 |
| 830 | 0 |
_aArtech House microwave library. _0http://id.loc.gov/authorities/names/n42002465 |
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