000			01985nam a2200325 a 4500
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003			MY-PjKIC
005			20250212112859.0
008			100211t1997 000 0 eng d
020			_a9780471127925
035			_a0471127922
039		9	_a201006201022 _bfaridah7 _c201002111746 _dVLOAD _c201002111619 _dVLOAD
040			_cfcuc
050			_aTK7871.85.84453 1997
082			_a621.38152 SEM 1997
090			_a621.38152 SEM 1997
245	0	0	_aSemiconductor Technology: Processing and Novel Fabrication Techniques.
260			_aNew York : _bJohn Wiley & Sons, _c1997.
300			_a240 p. : _bill.
500			_a"A Wiley-Interscience publication."
500			_aIncludes index.
520			_aDrawing on decades of Russian semiconductor research, this remarkable book makes available a great many Si and III-V semiconductor technologies that are practically unknown in the West. Often simpler and cheaper than conventional Western methods, these approaches will enable researchers to improve the quality of semiconductor materials and fabricate new types of devices. After a general introduction to semiconductor technology, the book describes transmutation doping, which offers all the advantages of neutron doping, permits controlled doping depth from 0.1 micron to 1mm, and offers the option of forming deep channels. Also presented is a novel technique using polymer spinon diffusant films for a uniform and reproducible introduction of impurities into silicon. Researchers and graduate students in solid state physics, device physics, materials science, and electrical engineering will find a wealth of original, stimulating, and valuable information in this unique manual.
650		0	_aSemiconductors.
650		0	_aSemiconductor doping.
650		0	_aSemiconductors _xDefects.
700	1		_aLevinshtein, M. E. _q(Mikhail Efimovich)
700	1		_aShur, Michael.
942			_2ddc _c3
999			_c13597 _d13597